Name | GERMANIUM NITRIDE |
Synonyms | GERMANIUM NITRIDE germanium(iii) nitride GERMANIUM TETRANITRIDE trigermanium tetranitride |
CAS | 12065-36-0 |
EINECS | 235-064-0 |
Molecular Formula | Ge3N4 |
Molar Mass | 273.95 |
Density | 5.35g/mLat 25°C(lit.) |
Melting Point | >850°C (dec.)(lit.) |
Water Solubility | insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10] |
Appearance | orthorhombic crystals |
Specific Gravity | 5.35 |
Storage Condition | Room Temprature |
Hazard Symbols | Xi - Irritant![]() |
Risk Codes | 36/37/38 - Irritating to eyes, respiratory system and skin. |
Safety Description | S26 - In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. S36 - Wear suitable protective clothing. |
WGK Germany | 3 |
TSCA | Yes |
background | Nitrides of III A and IV A elements can usually be used as high-temperature structural materials, catalysts, light-emitting diodes and refractory ceramics due to their excellent mechanical properties and thermodynamic properties. The current experimental and theoretical studies are mainly focused on BN and Si3N4 materials, and there are relatively few studies on germanium nitride (Ge3N4). In fact, because Ge atoms have higher carrier mobility than Si atoms, semiconductor field effect transistors made of germanium have more excellent performance. The radius of the germanium atom is large, so the critical pressure for the phase change of Ge3N4 is lower than the phase change pressure of Si3N4. Germanium nitride also has the advantages of corrosion resistance, high hardness and adjustable band gap, so it has great application prospects. |
physicochemical properties | insoluble in water and does not react with most inorganic acids and corrosive solutions. It can be reduced by hydrogen at 700 ℃. Reacts with oxygen at 850 ℃; Reacts with chlorine at 600~700 ℃; Decompose at 900~1000 ℃. |
pleomorphism research | using quantum chemistry AB initio calculation method, The microstructure, density of states and phonon spectra of the tetragonal, monoclinic and orthogonal structures of Ge3N4 were studied. The results of negative enthalpy of formation, elastic constants satisfying the Born stability criterion and the phonon spectrum without virtual frequency confirm that the three phases can maintain structural stability in the range of 020GPa. Temperature changes affect the unit cell volume, thereby changing the bulk modulus. All three kinds of Ge3N4 belong to semiconductors, and there is obvious s-p hybridization between Ge atom and N atom. When the pressure increases, delocalized electrons are induced, thereby reducing the band gap of the system. |
synthesis method | 1. Ge powder is heated to 650~700 ℃ in liquid ammonia to generate germanium nitride light brown powder. 2.GeCl4 and H2O directly generate GeO2,GeO2 directly generates Ge(NH)2 in liquid ammonia. The compound is unstable and converted to Ge2N3H at 150 ℃, and Ge2N3H is converted to Ge3N4 at 350 ℃. |
production method | 1. Ge powder is heated to 650~700 ℃ in liquid ammonia to generate germanium nitride light brown powder. 2.GeCl4 and H2O directly generate GeO2,GeO2 directly generates Ge(NH)2 in liquid ammonia. The compound is unstable and converted to Ge2N3H at 150 ℃, and Ge2N3H is converted to Ge3N4 at 350 ℃. |
EPA chemical information | information provided by: ofmpub.epa.gov (external link) |