25617-97-4
Gallium nitride
CAS: 25617-97-4
Molecular Formula: GaN
25617-97-4 - Names and Identifiers
| Name | Gallium nitride |
| Synonyms | Gallium nitride galliummononitride azanylidynegallane galliumnitride(gan) |
| CAS | 25617-97-4 |
| EINECS | 247-129-0 |
| InChIKey | JMASRVWKEDWRBT-UHFFFAOYSA-N |
25617-97-4 - Physico-chemical Properties
| Molecular Formula | GaN |
| Molar Mass | 83.73 |
| Density | 6.1 |
| Melting Point | 800 °C (lit.) |
| Boling Point | decomposes at >600℃ [KIR78] |
| Water Solubility | Slightly soluble in hot concentrated sulfuric acid and hot conc. sodium hydroxide. Insoluble in water and dilute acids. |
| Solubility | Insoluble in water, dilute acids. Slightly soluble in hot conc. H2SO4 |
| Appearance | Morphology Powder |
| Color | Yellow |
| Merck | 14,4351 |
| Storage Condition | Room Temprature |
| Stability | Stability Store under dry argon. Water and moisture sensitive. Incompatible with strong oxidizing agents. |
| Sensitive | Moisture Sensitive |
| Refractive Index | 2.70 (27℃) |
| MDL | MFCD00016108 |
25617-97-4 - Risk and Safety
| Safety Description | S22 - Do not breathe dust. S24/25 - Avoid contact with skin and eyes. |
| WGK Germany | 3 |
| RTECS | LW9640000 |
| FLUKA BRAND F CODES | 10-21 |
| TSCA | Yes |
25617-97-4 - Uses and synthesis methods
Third generation semiconductor materials
The third generation semiconductor materials are represented by gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond. They are the main materials in the 5G era. Among them, gallium nitride (GaN) and silicon carbide (SiC) have the largest market and development space.
As a third-generation semiconductor material, gallium nitride has a higher band gap. It is the material system with the highest theoretical electro-optical and photoelectric conversion efficiency so far. Downstream applications include microwave radio frequency devices (communication base stations, etc.), power electronics Devices (power supplies, etc.), optoelectronic devices (LED lighting, etc.). However, in the third-generation semiconductor materials, due to the limitation of technology and process level, gallium nitride materials are still facing challenges to achieve large-scale applications as substrates. Its applications are mainly based on sapphire, silicon wafers or silicon carbide wafers. Gallium nitride is grown by epitaxy to manufacture gallium nitride devices.
In fact, gallium nitride (GaN) technology is not a new semiconductor technology. It has been frequently used in light-emitting diodes since 1990, but it is expensive. In terms of manufacturing process, gallium nitride is not liquid, and it is not possible to use the traditional Czochralski method of single crystal silicon production process to pull out single crystals. It needs to be synthesized purely by gas reaction, and the properties of nitrogen are very stable, and gallium is a very rare metal (Gallium is an associated ore, and no concentrated gallium ore is formed. It is mainly extracted from bauxite, and the cost is relatively high), and the reaction time is long, the speed is slow, and the reaction produces many by-products. The production of gallium nitride is demanding on equipment, the technology is complex, the production capacity is extremely low, and the superposition of many factors makes the gallium nitride single crystal material very expensive.
category
Toxic substances
Toxicity classification
low toxicity
Acute toxicity
oral-mouse LDL0: 10000 mg/kg; Abdominal cavity-mouse LDL0: 5000 mg/kg
storage and transportation features
Warehouse ventilation low temperature drying
Fire extinguishing agent
Dry powder, foam, sand, carbon dioxide, mist water
Last Update：2024-04-10 22:29:15
25617-97-4 - Nature
| crystal structure | Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc |
| EPA chemical information | Gallium nitride (GaN) (25617-97-4) |
Last Update：2024-04-10 22:29:15
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View History
25617-97-4
炔丙基溴
3055-94-5
Tetraethyl ethylenebisphosphonate
629-14-1
高铼酸 溶液
L-高半胱氨酸
124-19-6
2174007-79-3
13463-67-7
炔丙基溴
3055-94-5
Tetraethyl ethylenebisphosphonate
629-14-1
高铼酸 溶液
L-高半胱氨酸
124-19-6
2174007-79-3
13463-67-7